Nanometer silicon carbide/ Nano SiC(SiC 40nm 99.9%)
Astaamaha ugu muhiimsan eeNanometer silicon carbide, budada carbide silicon aad u fiican oo lagu diyaariyey hab gaar ah oo leh daahirnimo sare, kala duwanaansho yar oo cabbir qaybin ah, bedka dusha sare ee gaarka ah; nano silicon carbide waxay leedahay sifooyin kiimiko oo deggan, conductivity kuleyl sare (165W/MK), isku-darka ballaarinta kulaylka yar, adkaanta sare, adkaanta Mohs ee 9.5, microhardness 2840 ~ 3320kg/mm2 Marka hore, walxaha lagu daro waxay xirtaan, adkaanta u dhaxaysa corundum iyo dheemanka, xoogga farsamada ayaa ka sarreeya corundum; nano silicon carbide waxay leedahay conductivity kuleyl aad u fiican, ama semiconductor, heerkulka sare ee ka hortagga oksaydhka; nano silicon carbide-ka-adkaysta xirashada, iska caabbinta heerkulka sare, daxalka, dareeraha aashitada iyo alkali, si ballaaran loogu isticmaalo rinjiyeynta, rinjiyeynta gudaha, kordhinta iska caabbinta xirashada.
1. Agab nayloon oo xoog badan oo wax laga beddelay: budada nano-SiC ee ku jirta isku-dhafka polymer-ka waxay leeyihiin is-waafajin wanaagsan, kala-fidin wanaagsan, iyo substrate-ka, xoogga la qaboojiyey ee daawaha nayloon ee xoogga badan ee wax laga beddelay marka loo eego PA6-ka caadiga ah ayaa kordhay 150%, iska caabbinta xirashada ayaa korodhay in ka badan saddex jeer. Inta badan waxaa loo isticmaalaa baabuurta gaashaaman ee qaybaha polymer-ka, qaybaha isteerinka, mashiinnada dharka, mashiinnada macdanta, dahaarka, qaybaha tareenka waxay ku gaari karaan cufnaan heerkul hoose oo sintering ah;
2. Wax ka beddelka balaastikada injineernimada gaarka ah ee polyether ether ketone (PEEK) iska caabbinta xirashada: daaweynta dusha sare ee nano silicon carbide ka dib shirkadda, oo lagu daray 5% ama wax la mid ah, waxay si weyn u hagaajin kartaa oo u xoojin kartaa iska caabbinta xirashada ee PEEK iyo (si loo hagaajiyo asalka in ka badan 30%);
3. carbide silicon nm ah oo ku jira taayirka caagga ah: carbide silicon nano, ku dar qiyaastii 2% hoos ujeedka ma beddelayo wax ka beddelka qaacidada koolada asalka ah, iyada oo aan wax u dhimayn waxqabadkeedii asalka ahaa iyo tayadiisa, iska caabbinta xirashada waxaa lagu kordhin karaa 20% -40%. Intaa waxaa dheer, carbide silicon 40 nm ah oo loo isticmaalo duubista caagga ah, xirashada filimka fiyuuska daabacaha, kulaylka, heerkulka iyo alaabada kale ee caagga ah;
4. Dahaarka isku-dhafka ah ee nano-SiC ee dusha sare ee birta: walxaha isku dhafan ee walxaha nanoscale, birta matrix-ka nickel, dusha sare ee birta si loo sameeyo cufnaan sare, oo isku xidha dahaarka isku-dhafka ah ee aad u wanaagsan ee elektroodka leh, dusha sare ee birta oo leh astaamo heerkul sare oo aad u adag (xirasho) iyo iska-caabbinta is-salibidda. Adkeysiga yar ee dahaarka isku-dhafka ah ayaa si weyn u hagaajiya iska caabbinta xirashada waxaana kordha 2-3 jeer, cimriga adeegga ayaa kordha 3-5 jeer, dahaarka iyo awoodda xidhitaanka substrate-ka ayaa kordha 40%, awoodda daboolida, dahaarka isku-dhafka ah, siman, faahfaahsan; Shan codsi oo kale: dhoobada qaab-dhismeedka waxqabadka sare leh (sida tuubooyinka gantaalada, warshadaha nukliyeerka, iwm.), nuugayaasha, dufanka ka hortagga xirashada, suufka biriiga ee waxqabadka sare leh, dahaarka budada ee adkeysiga sare iyo xirashada u adkaysta, xoojinta iyo adkaynta isku-dhafka dhoobada, iwm.;
warshadaha hawada sare qaab-dhismeedka dahaarka, dahaarka shaqada, dahaarka ilaalinta, walxaha nuugaya, walxaha qarsoon, iwm.;
gaashaanka difaaca ee taangiyada iyo gawaarida gaashaaman; qalabka jarista dhoobada, qalabka jarista, qalabka cabbiraadda, caaryada;
waxaa loo isticmaali karaa ujeedooyin gaar ah oo ah dhoobada qaab-dhismeedka, dhoobada shaqaynaysa, dhoobada injineernimada; dab-shidka; walxaha kululaynta korontada ee loogu talagalay isticmaalka warshadaha, matoorka fog ee infrared.
| Badeecadaha waa la kala saaraa | Moodel | Cabbirka walxaha celceliska (nm) | Nadiifnimo (%) | Bedka dusha sare ee gaarka ah (m2/ g) | Cufnaanta badan (g / cm)3) | Polymorphs | Midab |
| Nanoscale | SiC-001 | 40 | > 99.9 | 39.8 | 0.11 | Kuub | Celadon |
| Submicron | SiC-002 | 600 ilaa 800 | > 99.5 | 3.20 | 1.52 | Kuub | Cadaan aan gacmeed lahayn |
| 1. | Nanometer silicon carbide / Nano SiC 40nm 99.9% |
| 2. | Nano-titanium carbide / Nano TiC 40nm 99.9% |
| 3. | Budada WC ee qaabaysan ee nano/ Nano WC 50nm 99.9% |
| 4. | nanometer zirconium carbide/ Nano ZrC 50nm 99.9% |
| 5. | Nano vanadium carbide / Nano VC 50nm 99.9% |
| 6. | Nano-tantalum carbide / Nano TaC 100nm 99.9% |
| 7. | Nano-molybdenum carbide/ Nano MoC 80nm 99.9% |
| 8. | Kaarboohaydrayt nano-chromium / Nano CrC 80nm 99.9% |
