i-nanometer silicon carbide/ i-Nano SiC(SiC 40nm 99.9%)
Izici eziyinhloko zeI-nanometer silicon carbide, i-silicon carbide powder ye-silicon ecolekile kakhulu elungiselelwe ngenqubo ekhethekile enobumsulwa obuphezulu, ububanzi bokusatshalaliswa kosayizi bezinhlayiya ezincane, indawo ephezulu ethile; i-nano silicon carbide inezakhiwo zamakhemikhali ezizinzile, i-thermal conductivity ephezulu (165W/MK), i-coefficient yokwanda kokushisa okuncane, ubulukhuni obuphezulu, ubulukhuni be-Mohs obungu-9.5, ubulukhuni obuncane 2840 ~ 3320kg/mm2 Okokuqala, izithasiselo zokuguguleka kwezinto zokwakha, ubulukhuni bayo phakathi kwe-corundum nedayimane, amandla omshini aphezulu kune-corundum; i-nano silicon carbide inokuqhuba kahle kokushisa, noma i-semiconductor, i-anti-oxidation yokushisa okuphezulu; i-nano silicon carbide engagugi, ukumelana nokushisa okuphezulu, ukugqwala, i-acid kanye ne-alkali solvent, esetshenziswa kabanzi kupende, ipenda ngaphakathi, yandisa ukumelana nokuguguleka.
1. Izinto ze-nylon ezinamandla aphezulu eziguquliwe: i-nano-SiC powder ezihlanganisweni ze-polymer zinokuhambisana okuhle, ukuhlakazeka okuhle, kanye ne-substrate, amandla okudonsa e-nylon anamandla aphezulu aguquliwe kune-PA6 evamile akhuphuke ngo-150%, ukumelana nokuguguleka kukhuphuke ngaphezu kwezikhathi ezintathu. Isetshenziswa kakhulu ezimotweni ezilandelelwe ngezikhali izingxenye ze-polymer, izingxenye zokuqondisa, imishini yendwangu, imishini yezimayini, ama-linings, izingxenye zesitimela zingafezwa ekuqineni okuphansi kokushisa okushisayo;
2. Ukuguqulwa kwepulasitiki ekhethekile yobunjiniyela ukumelana nokuguguleka kwe-polyether ether ketone (PEEK): ukwelashwa kobuso be-nano silicon carbide ngemuva kwenkampani, okunezela u-5% noma ngaphezulu, kungathuthukisa kakhulu futhi kuthuthukise ukumelana nokuguguleka kwe-PEEK futhi (ukuthuthukisa okwangempela okungaphezu kuka-30%);
3. i-nm silicon carbide ethayini lerabha: i-nano silicon carbide, engeza cishe u-2% ngaphansi kwesisekelo ayishintshi ukuguqulwa kwefomula yeglue yokuqala, ngaphandle kokubeka engcupheni ukusebenza kwayo kwasekuqaleni kanye nekhwalithi, ukumelana nokuguguleka kungandiswa ngo-20% -40%. Ngaphezu kwalokho, i-40 nm silicon carbide esetshenziswa ku-roller yerabha, ukuguguleka kwefilimu yephrinta ye-fuser, ukushisa, izinga lokushisa kanye neminye imikhiqizo yerabha;
4. Ukuhlanganiswa kwe-nano-SiC okuhlanganisiwe okungaphezulu kwensimbi: izinhlayiya ezixubile zezinhlayiya ze-nanoscale, insimbi ye-nickel matrix, ubuso bensimbi ukwakha ubuningi obukhulu, ukubopha okuhle kakhulu okuhlanganisiwe kwe-electrodeposition, ubuso bensimbi obunezici zokushisa eziphakeme ezizigcobayo kakhulu (ukuguguleka) kanye nokulwa nokuqhekeka. Ukuqina okuncane kokuhlanganiswa kwe-composite kuthuthukisa kakhulu ukumelana nokuguguleka kukhushulwa izikhathi ezingu-2-3, impilo yesevisi ikhushulwe izikhathi ezingu-3-5, ukuhlanganiswa kanye nomthamo wokubopha we-substrate kukhushulwe ngo-40%, ikhono lokumboza, ukuhlanganiswa okufanayo, okubushelelezi, okunemininingwane; Ezinye izinhlelo zokusebenza ezinhlanu: i-ceramics yesakhiwo esebenza kahle kakhulu (njenge-rocket nozzles, imboni yenuzi, njll.), ama-absorber, i-anti-wear grease, ama-brake pads asebenza kahle kakhulu, ukuqina okuphezulu kanye nokuhlanganiswa kwe-powder okumelana nokuguguleka, ukuqinisa nokuqinisa kwe-ceramic composite, njll.;
imboni yezindiza isakhiwo sokumboza, ukumboza okusebenzayo, ukumboza okuvikelayo, izinto ezimuncayo, izinto eziyimfihlo, njll.;
isivikelo sokuzivikela samathangi nezimoto ezihlomile; samathuluzi okusika ngobumba, amathuluzi okusika, amathuluzi okulinganisa, isikhunta;
ingasetshenziswa ngezinjongo ezikhethekile ze-ceramics zesakhiwo, i-ceramics ezisebenzayo, i-Engineering Ceramics; i-ignition; izinto zokushisa zikagesi zokusetshenziswa kwezimboni, i-generator ye-infrared ekude.
| Imikhiqizo ihlukaniswe ngezigaba | Imodeli | Usayizi wezinhlayiya omaphakathi (nm) | Ubumsulwa (%) | Indawo ethile yobuso (m2/ g) | Ubuningi benqwaba (g / cm2)3) | Ama-Polymorph | Umbala |
| Isikali Esincane | I-SiC-001 | 40 | > 99.9 | 39.8 | 0.11 | I-Cube | I-Celadon |
| I-Submicron | I-SiC-002 | 600 kuya ku-800 | > 99.5 | 3.20 | 1.52 | I-Cube | Okumhlophe okungajulile |
| 1. | i-nanometer silicon carbide / i-Nano SiC 40nm 99.9% |
| 2. | i-nano-titanium carbide / i-Nano TiC 40nm 99.9% |
| 3. | I-nano structured WC Powder/ Nano WC 50nm 99.9% |
| 4. | i-nanometer zirconium carbide/ Nano ZrC 50nm 99.9% |
| 5. | i-nano vanadium carbide / i-Nano VC 50nm 99.9% |
| 6. | i-nano-tantalum carbide / i-Nano TaC 100nm 99.9% |
| 7. | i-nano-molybdenum carbide/ i-Nano MoC 80nm 99.9% |
| 8. | i-nano-chromium carbide / i-Nano CrC 80nm 99.9% |
